使用內真空感測器可以隨意安置，取得最佳的製程監測方位。
2005/12/28
703nm 重要的氟譜線
多數的電漿系統會用到CF4, SF6等氣體在鍍膜或是蝕刻的製程中，而氟的殘留物都是不允許的。EmiCon系統可以有效偵測出製程中與結束前的氟含量，利用703nm的氟譜線可以知道製程中的氟含量。方法簡易而有效。
2005/12/27
What's the difference between the intensity listed in the database and the actual measurement?
This is an interesting question asked often while one touches and senses the plasma by optical emission spectrometry.
The radiation we are measuring with the EmiCon OES system is due to a two-step process in the plasma:
1. Ground state atoms are excited by electron collisions in higher electronic levels. The density of the excited atoms in a specific electronic level depends on the energy gap between the ground state (0 eV) and the higher electronic level and the electron temperature (i.e. electron energy distribution function EEDF, often Maxwelliam). The larger the gap the less is the density of the atom in this specific energy level.
2. From the higher electronic level the atom is decaying by spontaneous emission to some lower electronic level. This is the radiation we are measuring. The intensity given in the SpecLine database is the probability that the atom in the specific higher electron level will decay into the given lower electronic level.
This means for the Hg spectrum:
A.The lines at 404 nm, 435 nm and 546 nm are all decaying from the electronic level 7s2S with energy 7.73 eV. These there lines show an intensity distribution as given by the intensity values of the SpecLine database.
B. The line at 365 nm is decaying form the electronic level 6p2P° with energy 8.85 eV and the line 579 nm is decaying from the electronic level 6p1P° with energy 8.84 eV. Allthough these lines have a higher probability to decay than the lines form the 7s2S level, the denstiy of atoms in the 6p levels is much smaller due to the higher energy of the excited level (8.85 eV and 7.73 eV for the 7s level).
In general, the intensity of a line is ruled first by the excitation process (i.e. the energy of the higher electronic level) and second by the probabilty of decaying from the higher level to a lower level.
The remaining differences in the intensities of the lines is due to the sensitivity distribution of the EmiCon system, i.e. the system is most sensitive between 450 and 550 nm and less sensitive below 400 nm.
~~~ supported by Dr. Thomas Schütte of PLASUS ~~~
The radiation we are measuring with the EmiCon OES system is due to a two-step process in the plasma:
1. Ground state atoms are excited by electron collisions in higher electronic levels. The density of the excited atoms in a specific electronic level depends on the energy gap between the ground state (0 eV) and the higher electronic level and the electron temperature (i.e. electron energy distribution function EEDF, often Maxwelliam). The larger the gap the less is the density of the atom in this specific energy level.
2. From the higher electronic level the atom is decaying by spontaneous emission to some lower electronic level. This is the radiation we are measuring. The intensity given in the SpecLine database is the probability that the atom in the specific higher electron level will decay into the given lower electronic level.
This means for the Hg spectrum:
A.The lines at 404 nm, 435 nm and 546 nm are all decaying from the electronic level 7s2S with energy 7.73 eV. These there lines show an intensity distribution as given by the intensity values of the SpecLine database.
B. The line at 365 nm is decaying form the electronic level 6p2P° with energy 8.85 eV and the line 579 nm is decaying from the electronic level 6p1P° with energy 8.84 eV. Allthough these lines have a higher probability to decay than the lines form the 7s2S level, the denstiy of atoms in the 6p levels is much smaller due to the higher energy of the excited level (8.85 eV and 7.73 eV for the 7s level).
In general, the intensity of a line is ruled first by the excitation process (i.e. the energy of the higher electronic level) and second by the probabilty of decaying from the higher level to a lower level.
The remaining differences in the intensities of the lines is due to the sensitivity distribution of the EmiCon system, i.e. the system is most sensitive between 450 and 550 nm and less sensitive below 400 nm.
~~~ supported by Dr. Thomas Schütte of PLASUS ~~~
2005/12/26
Multi-channel plasma monitoring and controlling system is available
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It has been taking a long time to develop the multi-channel plasma emission monitoring and controlling system. I'm very appreciated in so many friends and customers who devoted themselves in the testing and gave us their great supports. Here is a picture for the product family.
More information will be updated later.
2005/07/14
In-vacuum optics protection device
Plasma process is extremely exciting and any in-vacuum optics is easily contaminated by unexpected coatings on mirrors or lenses which are essential to keep the best optical performance for metrology instruments. A special designed in-vacuum optics protection device is able to prevent most of the strong contaminations from the plasma processes, such as sputtering, plasma-CVD or etching. With applying this device, the monitoring stability of plasma process control is assured and preventive maintenance is extended tremendously as well.~~~ Supported by Dr. Thomas Schütte of PLASUS ~~~
2005/07/13
Welcome to Plasma Circus
Plasma Circus welcomes everyone to join us to introduce new plasma tools or devices that can improve the plasma technology or create new plasma applications. Please post your articles and pictures. Any problem encountered in your plasma applications is also welcome to post them for public discussions.
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